cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 1/8 btc2383k3 cystek product specification npn epitaxial planar transistor btc2383k3 features ? high breakdown voltage , bv ceo =160v ? low saturation voltage, v ce(sat) =0.2v(typ)@i c =500ma, i b =50ma ? complementary to bta1013k3 ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping btc2383k3-0-tb-g to-92l (pb-free lead plating and halogen-free package) 2000 pcs / tape & box BTC2383K3-0-BM-G to-92l (pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton btc2383k3 to-92l b base c collector e emitter bv ceo 160v i c 1a r cesat(max) 1 environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb : 2000 pcs / tape & box ; bm : 500 pcs/bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 2/8 btc2383k3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 200 collector-emitter voltage v ceo 160 emitter-base voltage v ebo 6 v collector current(dc) i c 1 collector current(pulsed)( note 1) i cp 3 base current i b 0.5 a power dissipation p d 900 mw thermal resistance, junction to ambient r ja 139 c/w operating junction temperature and storage range tj ; tstg -55~+150 c note 1: single pulse, pw 300 s, duty cycle 2%. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 200 270 - v i c =100 a bv ceo 160 210 - v i c =10ma bv ebo 6 7.4 - v i e =100 a i cbo - 15 100 na v cb =200v i ebo - 2 100 na v eb =6v v ce(sat) * - 200 500 mv i c =500ma, i b =50ma r ce(sat) * - 0.4 1 i c =500ma, i b =50ma v be(sat) * - 0.9 1.2 v i c =500ma, i b =50ma v be(on) * 0.45 0.62 0.75 v v ce =5v, i c =5ma h fe * 160 - 320 - v ce =5v, i c =100ma f t 100 180 - mhz v ce =10v, i c =50ma cob - 6.2 20 pf v cb =10v, i e =0a,f=1mhz *pulse test: pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 3/8 btc2383k3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) 200ua 300ua 400ua 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) 1.5ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) 10ma 4ma 6ma 8ma 20ma ib=2ma emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0123456 vce, collector-to-emitter voltage(v) ic, collector current(a) 10ma 25ma 50ma ib=5ma current gain vs collector current 10 100 1000 1 10 100 1000 ic, collector current(ma) current gain---hfe ta=125c ta= 75c ta= 25c ta=0c ta=-40c vce=1v current gain vs collector current 10 100 1000 1 10 100 1000 ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=5v
cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 4/8 btc2383k3 cystek product specification typical characteristics(cont.) current gain vs collector current 10 100 1000 1 10 100 1000 ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=10v saturation voltage vs collector current 10 100 1000 1 10 100 1000 ic, collector current(ma) saturation voltage---(mv) vcesat@ic=10ib ta=125c ta=75c ta=25c ta=0c ta=-40c saturation voltage vs collector current 100 1000 10000 1 10 100 1000 ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vbesat@ic=50ib on voltage vs collector current 100 1000 10000 1 10 100 1000 ic, collector current(ma) on voltage---(mv) vbeon@vce=5v ta=125c ta=75c ta=25c ta=0c ta=-40c capacitance vs reverse-biased voltage 1 10 100 0.1 1 10 100 vr, reverse-biased voltage(v) capacitance---(pf) cib cob power derating curve 0 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 175 ambient temperature---ta() power dissipation---pd(w)
cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 5/8 btc2383k3 cystek product specification typical characteristics(cont.) cutoff frequency vs collector current 10 100 1000 1 10 100 1000 ic, collector current(ma) cutoff frequency---ft(mhz) vce=10v
cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 6/8 btc2383k3 cystek product specification to-92l taping outline millimeters dim item min. max. a1 component body width 4.70 5.10 a component body height 7.80 8.20 t component body thickness 3.70 4.10 d lead wire diameter 0.35 0.55 d1 lead wire diameter 1 0.60 0.80 p pitch of component 12.40 13.00 p0 feed hole pitch 12.50 12.90 p2 hole center to component center 6.05 6.65 f1, f2 lead to lead distance 2.20 2.80 h component alignment, f-r -1.00 1.00 w tape width 17.50 19.00 w0 hole down tape width 5.50 6.50 w1 hole position 8.50 9.50 w2 hole down tape position - 1.00 h height of component from tape center 19.00 21.00 h0 lead wire clinch height 15.50 16.50 l1 lead wire (tape portion) 2.50 - d0 feed hole diameter 3.80 4.20 t1 taped lead thickness 0.35 0.45 t2 carrier tape thickness 0.15 0.25 p1 position of hole 3.55 4.15 p component alignment -1.00 1.00
cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 7/8 btc2383k3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds temperature(tp) 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c625k3 issued date : 2014.04.17 revised date : page no. : 8/8 btc2383k3 cystek product specification to-92l dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.146 0.161 3.700 4.100 e 0.307 0.323 7.800 8.200 a1 0.050 0.062 1.280 1.580 e *0.05 *1.270 b 0.014 0.022 0.350 0.550 e1 0.096 0.104 2.440 2.640 b1 0.024 0.031 0.600 0.800 l 0.543 0.559 13.800 14.200 c 0.014 0.018 0.350 0.450 ? - 0.063 - 1.600 d 0.185 0.201 4.700 5.100 h 0.000 0.012 0.000 0.300 d1 0.157 - 4.000 - notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . c2383 marking: s t yle: pin 1.emitter 2.collector 3.base 3-lead t o -92l plastic package cy s t ek p a cka g e code: k3 product nam e date code: y ear+month y ear: 7 2007, 8 2008 month: 1 1, 2 2, ??? , 9 9, a 10, b 11 , c 12
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